230 lines
		
	
	
		
			6.8 KiB
		
	
	
	
		
			C
		
	
	
	
			
		
		
	
	
			230 lines
		
	
	
		
			6.8 KiB
		
	
	
	
		
			C
		
	
	
	
| // SPDX-License-Identifier: GPL-2.0+
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| /*
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|  * Copyright (C) 2013 Atmel Corporation
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|  *		      Bo Shen <voice.shen@atmel.com>
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|  *
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|  * Copyright (C) 2015 Atmel Corporation
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|  *		      Wenyou Yang <wenyou.yang@atmel.com>
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|  */
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| 
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| #include <common.h>
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| #include <asm/io.h>
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| #include <asm/arch/atmel_mpddrc.h>
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| 
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| #define SAMA5D3_MPDDRC_VERSION		0x140
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| 
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| static inline void atmel_mpddr_op(const struct atmel_mpddr *mpddr,
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| 	      int mode,
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| 	      u32 ram_address)
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| {
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| 	writel(mode, &mpddr->mr);
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| 	writel(0, ram_address);
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| }
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| 
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| static int ddr2_decodtype_is_seq(const unsigned int base, u32 cr)
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| {
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| 	struct atmel_mpddr *mpddr = (struct atmel_mpddr *)base;
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| 	u16 version = readl(&mpddr->version) & 0xffff;
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| 
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| 	if ((version >= SAMA5D3_MPDDRC_VERSION) &&
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| 	    (cr & ATMEL_MPDDRC_CR_DECOD_INTERLEAVED))
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| 		return 0;
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| 
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| 	return 1;
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| }
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| 
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| 
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| int ddr2_init(const unsigned int base,
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| 	      const unsigned int ram_address,
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| 	      const struct atmel_mpddrc_config *mpddr_value)
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| {
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| 	const struct atmel_mpddr *mpddr = (struct atmel_mpddr *)base;
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| 
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| 	u32 ba_off, cr;
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| 
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| 	/* Compute bank offset according to NC in configuration register */
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| 	ba_off = (mpddr_value->cr & ATMEL_MPDDRC_CR_NC_MASK) + 9;
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| 	if (ddr2_decodtype_is_seq(base, mpddr_value->cr))
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| 		ba_off += ((mpddr_value->cr & ATMEL_MPDDRC_CR_NR_MASK) >> 2) + 11;
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| 
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| 	ba_off += (mpddr_value->md & ATMEL_MPDDRC_MD_DBW_MASK) ? 1 : 2;
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| 
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| 	/* Program the memory device type into the memory device register */
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| 	writel(mpddr_value->md, &mpddr->md);
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| 
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| 	/* Program the configuration register */
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| 	writel(mpddr_value->cr, &mpddr->cr);
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| 
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| 	/* Program the timing register */
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| 	writel(mpddr_value->tpr0, &mpddr->tpr0);
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| 	writel(mpddr_value->tpr1, &mpddr->tpr1);
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| 	writel(mpddr_value->tpr2, &mpddr->tpr2);
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| 
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| 	/* Issue a NOP command */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_NOP_CMD, ram_address);
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| 
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| 	/* A 200 us is provided to precede any signal toggle */
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| 	udelay(200);
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| 
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| 	/* Issue a NOP command */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_NOP_CMD, ram_address);
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| 
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| 	/* Issue an all banks precharge command */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_PRCGALL_CMD, ram_address);
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| 
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| 	/* Issue an extended mode register set(EMRS2) to choose operation */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_EXT_LMR_CMD,
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| 		       ram_address + (0x2 << ba_off));
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| 
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| 	/* Issue an extended mode register set(EMRS3) to set EMSR to 0 */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_EXT_LMR_CMD,
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| 		       ram_address + (0x3 << ba_off));
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| 
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| 	/*
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| 	 * Issue an extended mode register set(EMRS1) to enable DLL and
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| 	 * program D.I.C (output driver impedance control)
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| 	 */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_EXT_LMR_CMD,
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| 		       ram_address + (0x1 << ba_off));
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| 
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| 	/* Enable DLL reset */
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| 	cr = readl(&mpddr->cr);
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| 	writel(cr | ATMEL_MPDDRC_CR_DLL_RESET_ENABLED, &mpddr->cr);
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| 
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| 	/* A mode register set(MRS) cycle is issued to reset DLL */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_LMR_CMD, ram_address);
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| 
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| 	/* Issue an all banks precharge command */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_PRCGALL_CMD, ram_address);
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| 
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| 	/* Two auto-refresh (CBR) cycles are provided */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_RFSH_CMD, ram_address);
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_RFSH_CMD, ram_address);
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| 
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| 	/* Disable DLL reset */
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| 	cr = readl(&mpddr->cr);
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| 	writel(cr & (~ATMEL_MPDDRC_CR_DLL_RESET_ENABLED), &mpddr->cr);
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| 
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| 	/* A mode register set (MRS) cycle is issued to disable DLL reset */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_LMR_CMD, ram_address);
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| 
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| 	/* Set OCD calibration in default state */
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| 	cr = readl(&mpddr->cr);
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| 	writel(cr | ATMEL_MPDDRC_CR_OCD_DEFAULT, &mpddr->cr);
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| 
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| 	/*
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| 	 * An extended mode register set (EMRS1) cycle is issued
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| 	 * to OCD default value
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| 	 */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_EXT_LMR_CMD,
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| 		       ram_address + (0x1 << ba_off));
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| 
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| 	 /* OCD calibration mode exit */
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| 	cr = readl(&mpddr->cr);
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| 	writel(cr & (~ATMEL_MPDDRC_CR_OCD_DEFAULT), &mpddr->cr);
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| 
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| 	/*
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| 	 * An extended mode register set (EMRS1) cycle is issued
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| 	 * to enable OCD exit
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| 	 */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_EXT_LMR_CMD,
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| 		       ram_address + (0x1 << ba_off));
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| 
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| 	/* A nornal mode command is provided */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_NORMAL_CMD, ram_address);
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| 
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| 	/* Perform a write access to any DDR2-SDRAM address */
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| 	writel(0, ram_address);
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| 
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| 	/* Write the refresh rate */
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| 	writel(mpddr_value->rtr, &mpddr->rtr);
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| 
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| 	return 0;
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| }
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| 
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| int ddr3_init(const unsigned int base,
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| 	      const unsigned int ram_address,
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| 	      const struct atmel_mpddrc_config *mpddr_value)
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| {
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| 	struct atmel_mpddr *mpddr = (struct atmel_mpddr *)base;
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| 	u32 ba_off;
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| 
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| 	/* Compute bank offset according to NC in configuration register */
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| 	ba_off = (mpddr_value->cr & ATMEL_MPDDRC_CR_NC_MASK) + 9;
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| 	if (ddr2_decodtype_is_seq(base, mpddr_value->cr))
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| 		ba_off += ((mpddr_value->cr &
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| 			   ATMEL_MPDDRC_CR_NR_MASK) >> 2) + 11;
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| 
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| 	ba_off += (mpddr_value->md & ATMEL_MPDDRC_MD_DBW_MASK) ? 1 : 2;
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| 
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| 	/* Program the memory device type */
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| 	writel(mpddr_value->md, &mpddr->md);
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| 
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| 	/*
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| 	 * Program features of the DDR3-SDRAM device and timing parameters
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| 	 */
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| 	writel(mpddr_value->cr, &mpddr->cr);
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| 
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| 	writel(mpddr_value->tpr0, &mpddr->tpr0);
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| 	writel(mpddr_value->tpr1, &mpddr->tpr1);
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| 	writel(mpddr_value->tpr2, &mpddr->tpr2);
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| 
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| 	/* A NOP command is issued to the DDR3-SRAM */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_NOP_CMD, ram_address);
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| 
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| 	/* A pause of at least 500us must be observed before a single toggle. */
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| 	udelay(500);
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| 
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| 	/* A NOP command is issued to the DDR3-SDRAM */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_NOP_CMD, ram_address);
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| 
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| 	/*
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| 	 * An Extended Mode Register Set (EMRS2) cycle is issued to choose
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| 	 * between commercial or high temperature operations.
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| 	 */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_EXT_LMR_CMD,
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| 		       ram_address + (0x2 << ba_off));
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| 	/*
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| 	 * Step 7: An Extended Mode Register Set (EMRS3) cycle is issued to set
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| 	 * the Extended Mode Register to 0.
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| 	 */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_EXT_LMR_CMD,
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| 		       ram_address + (0x3 << ba_off));
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| 	/*
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| 	 * An Extended Mode Register Set (EMRS1) cycle is issued to disable and
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| 	 * to program O.D.S. (Output Driver Strength).
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| 	 */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_EXT_LMR_CMD,
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| 		       ram_address + (0x1 << ba_off));
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| 
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| 	/*
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| 	 * Write a one to the DLL bit (enable DLL reset) in the MPDDRC
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| 	 * Configuration Register.
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| 	 */
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| 
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| 	/* A Mode Register Set (MRS) cycle is issued to reset DLL. */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_LMR_CMD, ram_address);
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| 
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| 	udelay(50);
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| 
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| 	/*
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| 	 * A Calibration command (MRS) is issued to calibrate RTT and RON
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| 	 * values for the Process Voltage Temperature (PVT).
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| 	 */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_DEEP_CMD, ram_address);
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| 
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| 	/* A Normal Mode command is provided. */
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| 	atmel_mpddr_op(mpddr, ATMEL_MPDDRC_MR_MODE_NORMAL_CMD, ram_address);
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| 
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| 	/* Perform a write access to any DDR3-SDRAM address. */
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| 	writel(0, ram_address);
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| 
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| 	/*
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| 	 * Write the refresh rate into the COUNT field in the MPDDRC
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| 	 * Refresh Timer Register (MPDDRC_RTR):
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| 	 */
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| 	writel(mpddr_value->rtr, &mpddr->rtr);
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| 
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| 	return 0;
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| }
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