100 lines
3.4 KiB
C
100 lines
3.4 KiB
C
/*
|
|
* $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
|
|
*
|
|
* Portions of MTD ABI definition which are shared by kernel and user space
|
|
*/
|
|
|
|
#ifndef __MTD_ABI_H__
|
|
#define __MTD_ABI_H__
|
|
|
|
struct erase_info_user {
|
|
uint32_t start;
|
|
uint32_t length;
|
|
};
|
|
|
|
struct mtd_oob_buf {
|
|
uint32_t start;
|
|
uint32_t length;
|
|
unsigned char *ptr;
|
|
};
|
|
|
|
#define MTD_ABSENT 0
|
|
#define MTD_RAM 1
|
|
#define MTD_ROM 2
|
|
#define MTD_NORFLASH 3
|
|
#define MTD_NANDFLASH 4
|
|
#define MTD_PEROM 5
|
|
#define MTD_OTHER 14
|
|
#define MTD_UNKNOWN 15
|
|
|
|
#define MTD_CLEAR_BITS 1 /* Bits can be cleared (flash) */
|
|
#define MTD_SET_BITS 2 /* Bits can be set */
|
|
#define MTD_ERASEABLE 4 /* Has an erase function */
|
|
#define MTD_WRITEB_WRITEABLE 8 /* Direct IO is possible */
|
|
#define MTD_VOLATILE 16 /* Set for RAMs */
|
|
#define MTD_XIP 32 /* eXecute-In-Place possible */
|
|
#define MTD_OOB 64 /* Out-of-band data (NAND flash) */
|
|
#define MTD_ECC 128 /* Device capable of automatic ECC */
|
|
#define MTD_NO_VIRTBLOCKS 256 /* Virtual blocks not allowed */
|
|
|
|
/* Some common devices / combinations of capabilities */
|
|
#define MTD_CAP_ROM 0
|
|
#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
|
|
#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
|
|
#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
|
|
#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
|
|
|
|
|
|
/* Types of automatic ECC/Checksum available */
|
|
#define MTD_ECC_NONE 0 /* No automatic ECC available */
|
|
#define MTD_ECC_RS_DiskOnChip 1 /* Automatic ECC on DiskOnChip */
|
|
#define MTD_ECC_SW 2 /* SW ECC for Toshiba & Samsung devices */
|
|
|
|
/* ECC byte placement */
|
|
#define MTD_NANDECC_OFF 0 /* Switch off ECC (Not recommended) */
|
|
#define MTD_NANDECC_PLACE 1 /* Use the given placement in the structure (YAFFS1 legacy mode) */
|
|
#define MTD_NANDECC_AUTOPLACE 2 /* Use the default placement scheme */
|
|
#define MTD_NANDECC_PLACEONLY 3 /* Use the given placement in the structure (Do not store ecc result on read) */
|
|
#define MTD_NANDECC_AUTOPL_USR 4 /* Use the given autoplacement scheme rather than using the default */
|
|
|
|
struct mtd_info_user {
|
|
uint8_t type;
|
|
uint32_t flags;
|
|
uint32_t size; /* Total size of the MTD */
|
|
uint32_t erasesize;
|
|
uint32_t oobblock; /* Size of OOB blocks (e.g. 512) */
|
|
uint32_t oobsize; /* Amount of OOB data per block (e.g. 16) */
|
|
uint32_t ecctype;
|
|
uint32_t eccsize;
|
|
};
|
|
|
|
struct region_info_user {
|
|
uint32_t offset; /* At which this region starts,
|
|
* from the beginning of the MTD */
|
|
uint32_t erasesize; /* For this region */
|
|
uint32_t numblocks; /* Number of blocks in this region */
|
|
uint32_t regionindex;
|
|
};
|
|
|
|
#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)
|
|
#define MEMERASE _IOW('M', 2, struct erase_info_user)
|
|
#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)
|
|
#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)
|
|
#define MEMLOCK _IOW('M', 5, struct erase_info_user)
|
|
#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)
|
|
#define MEMGETREGIONCOUNT _IOR('M', 7, int)
|
|
#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)
|
|
#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)
|
|
#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)
|
|
#define MEMGETBADBLOCK _IOW('M', 11, loff_t)
|
|
#define MEMSETBADBLOCK _IOW('M', 12, loff_t)
|
|
|
|
struct nand_oobinfo {
|
|
uint32_t useecc;
|
|
uint32_t eccbytes;
|
|
uint32_t oobfree[8][2];
|
|
uint32_t eccpos[32];
|
|
};
|
|
|
|
#endif /* __MTD_ABI_H__ */
|